Title:
PHOTO-SENSING DEVICE, PHOTOSENSOR, AND DISPLAYDEVICE
Document Type and Number:
WIPO Patent Application WO/2009/119280
Kind Code:
A3
Abstract:
A photo-sensing device is disclosed, comprising a photoelectric conversion semiconductor thin film (14), thin films (16a, 16b) for ohmic contacts to be provided to form an incident light window on one face of the photoelectric conversion semiconductor thin film (14), first and second ohmic electrodes (17, 18) installed on the thin films (16a, 16b) for the ohmic contacts, a connection wiring (15) for short-circuiting the first and the second ohmic electrodes (17, 18), an insulating film (13) provided on the other face of the photoelectric conversion semiconductor thin film (14), and a first electrode (12) provided on the face of the insulating film (13) that does not contact the photoelectric conversion semiconductor thin film (14).
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Inventors:
YAMAGUCHI IKUHIRO (JP)
Application Number:
PCT/JP2009/054242
Publication Date:
July 15, 2010
Filing Date:
February 27, 2009
Export Citation:
Assignee:
CASIO COMPUTER CO LTD (JP)
YAMAGUCHI IKUHIRO (JP)
YAMAGUCHI IKUHIRO (JP)
International Classes:
H01L31/113; H01L27/146; H01L31/105
Foreign References:
| US20060124828A1 | 2006-06-15 | |||
| EP0660421A2 | 1995-06-28 | |||
| US20050258341A1 | 2005-11-24 | |||
| EP1818714A1 | 2007-08-15 | |||
| US20070164333A1 | 2007-07-19 | |||
| US3497698A | 1970-02-24 | |||
| US20070070025A1 | 2007-03-29 | |||
| US20080157136A1 | 2008-07-03 | |||
| US20080151161A1 | 2008-06-26 |
Other References:
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; 2001, JIAYI HUANG ET AL: "Gate-controlled-diode characterization of interface degradation caused by FN stress in deep submicron MOSFETs", XP002561737, Database accession no. 7354902
Attorney, Agent or Firm:
HIRAYAMA, Kazuyuki (Shinjukugyoen Bldg.3-10, Shinjuku 2-chom, shinjuku-ku Tokyo 22, JP)
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