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Title:
PHOTODETECTOR, MANUFACTURING METHOD FOR PHOTODETECTOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/013408
Kind Code:
A1
Abstract:
Provided is a photodetector in which optical properties due to the oblique incidence of light at an angle of view edge are improved. The photodetector comprises multiple pixels positioned in rows on a semiconductor substrate. Each of the multiple pixels comprises a photoelectric conversion part that performs photoelectric conversion of incident light, and a deflection part that is positioned on the light incident surface side of the photoelectric conversion part and has a plurality of pillars having different thicknesses or pitches or shapes within the pixel. With regard to a main light ray that enters at a different angle for each image height, the pillars guide the main light ray to the photoelectric conversion part at a prism angle that bends light differently for each pixel.

Inventors:
NOUDO SHINICHIRO (JP)
IWASE TOSHIHITO (JP)
YOKOCHI KAITO (JP)
SUZUKI MASAYUKI (JP)
TODA ATSUSHI (JP)
EBIKO YOSHIKI (JP)
YAMAMOTO ATSUSHI (JP)
NATORI TAICHI (JP)
TAKEUCHI KOICHI (JP)
Application Number:
PCT/JP2022/028108
Publication Date:
February 09, 2023
Filing Date:
July 19, 2022
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; G02B5/18
Domestic Patent References:
WO2021005851A12021-01-14
WO2011077695A12011-06-30
WO2013172232A12013-11-21
Foreign References:
JP2020537193A2020-12-17
JP2018156999A2018-10-04
JP2015028960A2015-02-12
US20180166594A12018-06-14
JP2013175494A2013-09-05
US20170261368A12017-09-14
US20150187834A12015-07-02
JP2018098641A2018-06-21
JP2018195908A2018-12-06
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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