Title:
PHOTODETECTOR
Document Type and Number:
WIPO Patent Application WO/2011/007703
Kind Code:
A1
Abstract:
In a photodetector (1), a hermetically sealed package is formed by a low-resistance Si substrate (3), an insulation layer (4), a high-resistance Si substrate (5) and a Si photodiode (20) and is formed around an InGaAs photodiode (30), disposed in a recess (6). Electric wiring is provided to the Si photodiode (20) and the InGaAs photodiode (30) by means of a wiring film (15) and an electrical path (8) in the low resistance Si substrate (3). In the Si photodiode (20), a p-type region (22) is provided in a section of the rear surface (21b) side of a Si substrate (21), whereas in contrast, in the InGaAs photodiode (30), a p-type region (32) is provided in a section of the front surface (31a) side of an InGaAs substrate (31).
Inventors:
WARASHINA YOSHIHISA (JP)
ISHIHARA MASATOSHI (JP)
SUZUKI TOMOFUMI (JP)
ISHIHARA MASATOSHI (JP)
SUZUKI TOMOFUMI (JP)
Application Number:
PCT/JP2010/061549
Publication Date:
January 20, 2011
Filing Date:
July 07, 2010
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
WARASHINA YOSHIHISA (JP)
ISHIHARA MASATOSHI (JP)
SUZUKI TOMOFUMI (JP)
WARASHINA YOSHIHISA (JP)
ISHIHARA MASATOSHI (JP)
SUZUKI TOMOFUMI (JP)
International Classes:
H01L31/10; G01J1/02
Domestic Patent References:
| WO2000062344A1 | 2000-10-19 |
Foreign References:
| JPH0318069A | 1991-01-25 | |||
| JP2005277063A | 2005-10-06 |
Other References:
See also references of EP 2455983A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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