Title:
PHOTODETECTOR
Document Type and Number:
WIPO Patent Application WO/2014/109444
Kind Code:
A1
Abstract:
Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogenous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350nm to 1100nm, and first and second electrodes are formed on the photodetection layer.
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Inventors:
CHOI SUK HO (KR)
KIM SUNG (KR)
KIM CHANG OH (KR)
KIM SUNG (KR)
KIM CHANG OH (KR)
Application Number:
PCT/KR2013/005702
Publication Date:
July 17, 2014
Filing Date:
June 27, 2013
Export Citation:
Assignee:
UNIV KYUNG HEE UNIV IND COOP GROUP (KR)
International Classes:
H01L31/10
Foreign References:
| US20110042650A1 | 2011-02-24 | |||
| US20120153119A1 | 2012-06-21 | |||
| US20120193610A1 | 2012-08-02 | |||
| KR20110020443A | 2011-03-03 | |||
| KR20120086177A | 2012-08-02 |
Other References:
See also references of EP 2945195A4
Attorney, Agent or Firm:
KASAN IP & LAW FIRM (KR)
특허법인 가산 (KR)
특허법인 가산 (KR)
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