PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME

Title:

PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2016/140309

Kind Code:

A1

Abstract:

Provided is a photoelectric conversion element with which it is possible to obtain a high fill factor and high open voltage (Voc), and a method for manufacturing the photoelectric conversion element. Provided are a semiconductor substrate (1) having a first surface (1a), an i-type amorphous semiconductor film (2) on the first surface (1a), a first-conductivity-type amorphous semiconductor film (3) on the i-type amorphous semiconductor film (2), a second-conductivity-type amorphous semiconductor film (4) on the first surface (1a), a first electrode (7) on the first-conductivity-type amorphous semiconductor film (3), and a second electrode (8) on the second-conductivity-type amorphous semiconductor film (4). In the second-conductivity-type amorphous semiconductor film (4), the second-conductivity-type impurity concentration of a first portion (4A) contacting the first surface (1a) is lower than the second-conductivity-type impurity concentration of a second portion (4B) contacting the second electrode (8), and higher than the second-conductivity-type impurity concentration of the i-type amorphous semiconductor film (2).

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Inventors:

ISAKA TAKAYUKI
OKAMOTO CHIKAO
TADOKORO HIROYUKI
ISHII MASAHITO
SUGANUMA RIHITO

Application Number:

PCT/JP2016/056593

Publication Date:

September 09, 2016

Filing Date:

March 03, 2016

Export Citation:

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Assignee:

SHARP KK (JP)

International Classes:

H01L31/0747; H01L31/18

Foreign References:

JP2011061197A	2011-03-24
JP2013191657A	2013-09-26
JP2013125891A	2013-06-24
US20120048370A1	2012-03-01
JP2010147324A	2010-07-01
JP2008021993A	2008-01-31
US20080173347A1	2008-07-24

Attorney, Agent or Firm:

Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)

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