Title:
PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/112046
Kind Code:
A1
Abstract:
This photoelectric conversion element comprises depletion layer expansion sections (10a, 11) having a p-type upper region, a p-type photoelectric conversion layer (12) in contact with the depletion layer expansion sections (10a, 11), and an n-type surface-embedded region (15) that is embedded in the upper part of the photoelectric conversion layer (12) and that forms a photodiode with the photoelectric conversion layer (12). A first p-well (14a) is surrounded by a first n-tab (13b), the first n-tab (13b) is surrounded by a second p-well (14b), the second p-well (14b) is surrounded by a second n-tab (13d), and the second n-tab (13d) is surrounded by a third p-well (14c). Injection of a carrier having the opposite conductivity type from a signal charge from the second p-well (14b) to the photoelectric conversion layer (12) is prevented by injection blocking sections (13b, 13d). Voltage applied to the depletion layer expansion sections (10a, 11) causes depletion to occur within the photoelectric conversion layer (12).
Inventors:
KAWAHITO SHOJI (JP)
Application Number:
PCT/JP2018/045118
Publication Date:
June 13, 2019
Filing Date:
December 07, 2018
Export Citation:
Assignee:
UNIV SHIZUOKA NAT UNIV CORP (JP)
International Classes:
H01L27/146; H01L21/8238; H01L27/092; H01L31/10; H04N5/369; H04N5/374
Domestic Patent References:
| WO2010151299A1 | 2010-12-29 | |||
| WO2016157910A1 | 2016-10-06 | |||
| WO2016015791A1 | 2016-02-04 |
Foreign References:
| JP2015177191A | 2015-10-05 | |||
| JP2010056345A | 2010-03-11 | |||
| US20110024808A1 | 2011-02-03 | |||
| JP2015177191A | 2015-10-05 |
Other References:
See also references of EP 3723133A4
Attorney, Agent or Firm:
SUZUKI Sohbe (JP)
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