Title:
PHOTORESIST STRIP WITH 02 AND NH3 FOR ORGANOSILICATE GLASS APPLICATIONS
Document Type and Number:
WIPO Patent Application WO2002065513
Kind Code:
B1
Abstract:
Process for stripping photoresist from a semiconductor wafer formed with at least one layer of OSG dielectric. The stripping process may be formed in situ or ex situ with respect to other integrated circuit fabrication processes. The process includes a reaction may be oxidative or reductive in nature. The oxidative reaction utilizes an oxygen plasma. The reductive reaction utilizes an ammonia plasma. The process of the present invention results in faster ash rates with less damage to the OSG dielectric than previously known stripping methods.
Inventors:
ANNAPRAGADA RAO V (US)
MOREY IAN J (SG)
HO CHOK W (US)
MOREY IAN J (SG)
HO CHOK W (US)
Application Number:
PCT/US2002/003329
Publication Date:
November 27, 2003
Filing Date:
January 30, 2002
Export Citation:
Assignee:
LAM RES CORP (US)
ANNAPRAGADA RAO V (US)
MOREY IAN J (SG)
HO CHOK W (US)
ANNAPRAGADA RAO V (US)
MOREY IAN J (SG)
HO CHOK W (US)
International Classes:
G03F7/42; H01L21/311; (IPC1-7): H01L21/311; G03F7/42; H01L21/768
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