Title:
PHOTOSENSOR ELEMENT, PHOTOSENSOR CIRCUIT, THIN-FILM TRANSISTOR SUBSTRATE, AND DISPLAY PANEL
Document Type and Number:
WIPO Patent Application WO/2011/080863
Kind Code:
A1
Abstract:
Disclosed is a photosensor element provided with: a gate electrode (11da) on an insulating substrate (10); a gate insulation film (12) provided so as to cover the gate electrode (11da); a semiconductor layer (15db) provided on the gate insulation film (12) so as to overlap the gate electrode (11da); and a source electrode (16da) and drain electrode (16db) disposed opposite each other on the semiconductor layer (15db) so as to overlap the gate electrode (11da). The semiconductor layer (15db) is provided with: an intrinsic semiconductor layer (13db) in which a channel region (C) is defined; and an extrinsic semiconductor layer (14db) layered on top of the intrinsic semiconductor layer (13db) such that the channel region (C) is exposed. The intrinsic semiconductor layer (13db) is an amorphous silicon layer containing nanocrystalline silicon grains.
Inventors:
MORIGUCHI MASAO
KANZAKI YOHSUKE
INOUE TSUYOSHI
KANZAKI YOHSUKE
INOUE TSUYOSHI
Application Number:
PCT/JP2010/006634
Publication Date:
July 07, 2011
Filing Date:
November 11, 2010
Export Citation:
Assignee:
SHARP KK (JP)
MORIGUCHI MASAO
KANZAKI YOHSUKE
INOUE TSUYOSHI
MORIGUCHI MASAO
KANZAKI YOHSUKE
INOUE TSUYOSHI
International Classes:
H01L21/336; H01L31/10; H01L27/146; H01L29/786
Foreign References:
| JPH06133224A | 1994-05-13 | |||
| JP2004300530A | 2004-10-28 | |||
| JP2009302192A | 2009-12-24 |
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (JP)
Hiroshi Maeda (JP)
Hiroshi Maeda (JP)
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