Title:
PIEZOELECTRIC FILM, METHOD FOR PRODUCING SAME, AND PIEZOELECTRIC COMPONENT USING PIEZOELECTRIC FILM
Document Type and Number:
WIPO Patent Application WO/2017/149675
Kind Code:
A1
Abstract:
Provided is an AlN piezoelectric film wherein the piezoelectric constant is improved, while suppressing the generation of a film stress.
A piezoelectric film which is formed of an aluminum nitride crystal having a wurtzite structure, and wherein the aluminum nitride crystal has a structure in which scandium atoms and boron atoms are contained and some of aluminum atoms in the aluminum nitride crystal are substituted by scandium atoms or boron atoms.
Inventors:
UMEDA KEIICHI (JP)
MIZUNO TAKAAKI (JP)
MIZUNO TAKAAKI (JP)
Application Number:
PCT/JP2016/056303
Publication Date:
September 08, 2017
Filing Date:
March 01, 2016
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H03H9/17; C23C14/34; C30B29/38
Domestic Patent References:
| WO2013172251A1 | 2013-11-21 |
Foreign References:
| JP2009010926A | 2009-01-15 | |||
| US20140340172A1 | 2014-11-20 |
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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