PLASMA ETCHING METHOD AND PLASMA TREATMENT DEVICE

Title:

PLASMA ETCHING METHOD AND PLASMA TREATMENT DEVICE

Document Type and Number:

WIPO Patent Application WO/2013/187429

Kind Code:

A1

Abstract:

A method for performing plasma etching on a silicon oxide film layer laminated on a wafer, using a silicon mask formed on the silicon oxide film as the mask; wherein the silicon oxide film layer (3) is etched using a plasma of a CF-containing gas, and an Si-containing material is then deposited on the mask using a plasma of an Si-containing gas, after which the silicon oxide film layer is again etched using a plasma of a CF-containing gas in a state in which the Si-containing material is deposited on the silicon mask. A hole having an aspect ratio equal to or greater than 60 is thereby formed.

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Inventors:

WATANABE HIKARU (JP)

Application Number:

PCT/JP2013/066162

Publication Date:

December 19, 2013

Filing Date:

June 12, 2013

Export Citation:

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Assignee:

TOKYO ELECTRON LTD (JP)

International Classes:

H01L21/3065; H05H1/46

Foreign References:

JP2010153702A	2010-07-08
JP2012109395A	2012-06-07

Attorney, Agent or Firm:

KANEMOTO, Tetsuo et al. (JP)
Tetsuo Kanamoto (JP)

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