Title:
PLASMA ETCHING METHOD AND PLASMA TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/187429
Kind Code:
A1
Abstract:
A method for performing plasma etching on a silicon oxide film layer laminated on a wafer, using a silicon mask formed on the silicon oxide film as the mask; wherein the silicon oxide film layer (3) is etched using a plasma of a CF-containing gas, and an Si-containing material is then deposited on the mask using a plasma of an Si-containing gas, after which the silicon oxide film layer is again etched using a plasma of a CF-containing gas in a state in which the Si-containing material is deposited on the silicon mask. A hole having an aspect ratio equal to or greater than 60 is thereby formed.
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Inventors:
WATANABE HIKARU (JP)
Application Number:
PCT/JP2013/066162
Publication Date:
December 19, 2013
Filing Date:
June 12, 2013
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H05H1/46
Foreign References:
JP2010153702A | 2010-07-08 | |||
JP2012109395A | 2012-06-07 |
Attorney, Agent or Firm:
KANEMOTO, Tetsuo et al. (JP)
Tetsuo Kanamoto (JP)
Tetsuo Kanamoto (JP)
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