Title:
PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/176674
Kind Code:
A1
Abstract:
This plasma processing method is executed by a plasma processing device including a processing container in which a substrate to be processed is accommodated, a plurality of plasma sources for supplying electromagnetic waves, and a gas supply device for supplying a gas. The plasma processing method includes: a step in which a gas is supplied within the processing container from the gas supply device; a step in which the intensities of the power of electromagnetic waves introduced into the processing container from each of the plurality of plasma sources are controlled individually; and a step in which a plasma of the gas is generated by means of the intensities of the power of the electromagnetic waves introduced from each of the plurality of plasma sources and, in order to apply a desired film stress to a film on a first surface of the substrate to be processed, a desired film is formed on a second surface of the substrate to be processed which is a surface on the opposite side from the first surface of the substrate to be processed.
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Inventors:
ITOH SATOSHI (JP)
KOHAMA NORIFUMI (JP)
EMORI SOUDAI (JP)
IP NATHAN (US)
KOHAMA NORIFUMI (JP)
EMORI SOUDAI (JP)
IP NATHAN (US)
Application Number:
PCT/JP2022/004700
Publication Date:
August 25, 2022
Filing Date:
February 07, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/318
Foreign References:
| JP2018073880A | 2018-05-10 | |||
| JP2020150133A | 2020-09-17 | |||
| JP2006120703A | 2006-05-11 | |||
| JP2020170643A | 2020-10-15 | |||
| JP2020017606A | 2020-01-30 | |||
| JP2021044201A | 2021-03-18 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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