Title:
PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2023/176555
Kind Code:
A1
Abstract:
Disclosed is a plasma treatment device comprising: a first baffle plate; and a second baffle plate. The first and second baffle plates are arranged between an exhaust gas space and a treatment space in a chamber. The second baffle plate is provided downstream of the first baffle plate along the flow of gas in the chamber. During a period of time that is at least a portion of a waveform cycle of electric bias energy that is periodically applied to a substrate support part in the chamber, the value of voltage applied to the second baffle plate is higher than the value of voltage applied to the first baffle plate.
Inventors:
KOSHIMIZU CHISHIO (JP)
Application Number:
PCT/JP2023/008388
Publication Date:
September 21, 2023
Filing Date:
March 06, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H05H1/46
Foreign References:
| US20140051253A1 | 2014-02-20 | |||
| JP2004006574A | 2004-01-08 | |||
| JP2010238980A | 2010-10-21 | |||
| JP2000348897A | 2000-12-15 | |||
| JP2012015451A | 2012-01-19 | |||
| JP2015216260A | 2015-12-03 | |||
| JP2016115848A | 2016-06-23 | |||
| JP2016063083A | 2016-04-25 | |||
| JP2013503494A | 2013-01-31 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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