Title:
POLISHING COMPOSITION FOR SILICON WAFER, COMPOSITION KIT FOR SILICON WAFER POLISHING, AND METHODS OF POLISHING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2007/108153
Kind Code:
A1
Abstract:
A polishing composition with which a native oxide deposit on a silicon wafer can be removed and silicon polishing can be efficiently conducted. The polishing composition comprises colloidal ceria and optionally contains an alkaline polishing composition. This composition may further contain a chelating agent. Also provided are: a polishing method comprising the step of removing an oxide deposit with colloidal ceria; a polishing method comprising the step of removing an oxide deposit with colloidal ceria and the subsequent step of polishing the silicon wafer with an alkaline polishing composition; and a polishing method comprising the step of polishing a silicon wafer with a polishing composition comprising colloidal ceria and an alkaline polishing composition. Furthermore provided is a polishing composition kit comprising colloidal ceria and an alkaline polishing composition.
Inventors:
IWATA NAOYUKI (JP)
NAGASHIMA ISAO (JP)
NAGASHIMA ISAO (JP)
Application Number:
PCT/JP2006/320750
Publication Date:
September 27, 2007
Filing Date:
October 18, 2006
Export Citation:
Assignee:
DUPONT AIRPRODUCTS NANOMATERIA (US)
IWATA NAOYUKI (JP)
NAGASHIMA ISAO (JP)
IWATA NAOYUKI (JP)
NAGASHIMA ISAO (JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Foreign References:
| JP2001237203A | 2001-08-31 | |||
| JP2001077063A | 2001-03-23 | |||
| JPH11307487A | 1999-11-05 | |||
| JP2001127021A | 2001-05-11 | |||
| JPH01193170A | 1989-08-03 | |||
| JPH10102040A | 1998-04-21 |
Attorney, Agent or Firm:
TANI, Yoshikazu et al. (Akasaka 2-chome Minato-ku, Tokyo 52, JP)
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