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Title:
POLISHING LIQUID AND CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/255582
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a polishing liquid which is less likely to cause dishing on a surface to be polished of an object to be polished after polishing if applied to CMP of an object to be polished having a cobalt-containing film. The present invention also addresses the problem of providing a chemical mechanical polishing method which uses the above-described polishing liquid.　A polishing liquid according to the present invention is used in chemical mechanical polishing of an object to be polished having a cobalt-containing film; and this polishing liquid contains colloidal silica, a nitrogen-containing aromatic heterocyclic compound and hydrogen peroxide. At least a specific nitrogen-containing aromatic heterocyclic compound (1) and a specific nitrogen-containing aromatic heterocyclic compound (2), which is different from the nitrogen-containing aromatic heterocyclic compound (1), are contained as the nitrogen-containing aromatic heterocyclic compound.

Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2020/018766
Publication Date:
December 24, 2020
Filing Date:
May 11, 2020
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
C09K3/14; B24B37/00; H01L21/304
Domestic Patent References:
WO2018159530A12018-09-07
WO2016006631A12016-01-14
Foreign References:
JP2017527654A2017-09-21
JP2017157591A2017-09-07
JP2017107918A2017-06-15
JP2004273650A2004-09-30
JP2008251677A2008-10-16
JP2009064881A2009-03-26
JP2011091248A2011-05-06
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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