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Title:
POLISHING SOLUTION, METHOD FOR PRODUCING POLISHING SOLUTION, POLISHING SOLUTION STOCK SOLUTION, AND CHEMOMECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/204035
Kind Code:
A1
Abstract:
The invention provides a polishing solution that can obtain an excellent polishing rate when applied to CMP and is less likely to cause dishing of the surface to be polished, a method for producing a polishing solution, a polishing solution stock solution, and a chemomechanical polishing method. This polishing solution is a polishing solution for chemomechanical polishing that contains colloidal silica, an amino acid, two or more azole compounds, and an oxidizing agent, wherein a reaction layer having a thickness of 1-20 nm and containing copper atoms is formed on a copper substrate when the polishing solution and a copper substrate are brought into contact for 24 hours.

Inventors:
KAMIMURA Tetsuya (4000 Kawashiri, Yoshida-cho, Haibara-gu, Shizuoka 96, 〒4210396, JP)
Application Number:
JP2017/018353
Publication Date:
November 30, 2017
Filing Date:
May 16, 2017
Export Citation:
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Assignee:
FUJIFILM CORPORATION (26-30, Nishiazabu 2-chome Minato-k, Tokyo 20, 〒1068620, JP)
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Domestic Patent References:
2014-10-30
2011-06-30
2014-07-24
2009-02-05
Foreign References:
JP2010118378A2010-05-27
JP2010118377A2010-05-27
JP2007242984A2007-09-20
JP2008277723A2008-11-13
JP2010045258A2010-02-25
JP2010192556A2010-09-02
JP2008091574A2008-04-17
JP2007299942A2007-11-15
JP2008078494A2008-04-03
JP2010067914A2010-03-25
JP2009088080A2009-04-23
JP2009087981A2009-04-23
CN104419326A2015-03-18
JP2010067681A2010-03-25
JP2003297779A2003-10-17
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (Yusen Iwamoto-cho Bldg. 6F, 3-3 Iwamoto-cho 2-chome, Chiyoda-k, Tokyo 32, 〒1010032, JP)
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