Title:
POLISHING SOLUTION, METHOD FOR PRODUCING POLISHING SOLUTION, POLISHING SOLUTION STOCK SOLUTION, AND CHEMOMECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/204035
Kind Code:
A1
Abstract:
The invention provides a polishing solution that can obtain an excellent polishing rate when applied to CMP and is less likely to cause dishing of the surface to be polished, a method for producing a polishing solution, a polishing solution stock solution, and a chemomechanical polishing method. This polishing solution is a polishing solution for chemomechanical polishing that contains colloidal silica, an amino acid, two or more azole compounds, and an oxidizing agent, wherein a reaction layer having a thickness of 1-20 nm and containing copper atoms is formed on a copper substrate when the polishing solution and a copper substrate are brought into contact for 24 hours.
Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2017/018353
Publication Date:
November 30, 2017
Filing Date:
May 16, 2017
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
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Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
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