Title:
POLYCRYSTALLINE SILICON FILM AND MANUFACTURING METHOD, TFT AND MANUFACTURING METHOD, AND DISPLAY PANEL
Document Type and Number:
WIPO Patent Application WO/2016/206244
Kind Code:
A1
Abstract:
Provided are a polycrystalline silicon film and a manufacturing method, a TFT and a manufacturing method, and a display panel. The manufacturing method for the polycrystalline silicon film comprises: forming a polycrystalline silicon layer (3); treating the surface of the polycrystalline silicon layer (3) to allow the surface of the polycrystalline silicon layer (3) to be electronegative; and introducing a polar gas into a process cavity, and adsorbing polar molecules (4) in the polar gas on the surface of the polycrystalline silicon layer (3) which is electronegative, in order to obtain the polycrystalline silicon film with a hole density larger than an electron density on the surface. An upward electric field is formed on the surface of the polycrystalline silicon film, so as to accumulate holes (5) on the surface of the polycrystalline silicon film, stable hole conductive channels are formed on the surface of the polycrystalline silicon film, and since the migration speed of the holes (5) are lower, the light-induced current leakage effect and the current leakage effect caused by high temperature, stress, etc. can be reduced, thereby reducing the leakage current.
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Inventors:
LI XIAOLONG (CN)
LIU ZHENG (CN)
LU XIAOYONG (CN)
LI DONG (CN)
LONG CHUNPING (CN)
LIU ZHENG (CN)
LU XIAOYONG (CN)
LI DONG (CN)
LONG CHUNPING (CN)
Application Number:
PCT/CN2015/092080
Publication Date:
December 29, 2016
Filing Date:
October 16, 2015
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L21/02; H01L21/77; H01L27/12
Foreign References:
| CN104659109A | 2015-05-27 | |||
| CN101740387A | 2010-06-16 | |||
| US7115449B2 | 2006-10-03 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
北京市中咨律师事务所 (CN)
北京市中咨律师事务所 (CN)
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