POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN

WIPO Patent Application WO/2005/080473

A1

Disclosed is a polymer compound which enables to obtain a highly sensitive photoresist composition which forms a fine pattern with excellent resolution and good rectangular shape and is capable of obtaining good resist characteristics even when the acid generated by an acid generator is weak. Also disclosed are a photoresist composition using such a polymer compound and a method for forming a resist pattern using such a photoresist composition. The photoresist composition and resist pattern-forming method use a polymer compound having an alkali-soluble group (i) which is at least one substituent selected from an alcoholic hydroxyl group, a carboxyl group and a phenolic hydroxyl group and protected by an acid-cleavable dissolution inhibiting group (ii) represented by the following general formula (1): (1) (wherein R₁ represents an alicyclic group having 20 or less carbon atoms which may have an oxygen, nitrogen, sulfur or halogen atom; and n represents 0 or an integer of 1-5).

OGATA TOSHIYUKI (JP)
MATSUMARU SYOGO (JP)
KINOSHITA YOHEI (JP)
HADA HIDEO (JP)
SHIONO DAIJU (JP)
SHIMIZU HIROAKI (JP)
KUBOTA NAOTAKA (JP)

PCT/JP2005/001228

September 01, 2005

January 28, 2005

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TOKYO OHKA KOGYO CO LTD (JP)
OGATA TOSHIYUKI (JP)
MATSUMARU SYOGO (JP)
KINOSHITA YOHEI (JP)
HADA HIDEO (JP)
SHIONO DAIJU (JP)
SHIMIZU HIROAKI (JP)
KUBOTA NAOTAKA (JP)

C08G85/00; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): C08G85/00; G03F7/039; H01L21/027

JP2002363225A	2002-12-18
JP2001318465A	2001-11-16
JP2005017729A	2005-01-20
JP2003021839A	2003-01-24

None
See also references of EP 1717261A4

Tanai, Sumio (Yaesu Chuo-ku, Tokyo 53, JP)

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