Title:
POLYMER, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2016/132728
Kind Code:
A1
Abstract:
The purpose of the present invention is to enable satisfactorily forming a high-resolution resist pattern. The polymer contains an α-methylstyrene unit and an α-chloro-methyl acrylate unit, the proportion of components of a molecular weight of less than 6000 is 8% or greater, and the molecular weight distribution (Mw/Mn) is less than 1.25. This positive resist composition contains the aforementioned polymer and a solvent. This resist pattern formation method involves forming a resist film using the positive resist composition, exposing the resist film, and developing the exposed resist film, wherein developer solution is carried out using a developer liquid containing 90 mass% or more hexyl acetate.
Inventors:
HOSHINO MANABU (JP)
Application Number:
PCT/JP2016/000773
Publication Date:
August 25, 2016
Filing Date:
February 15, 2016
Export Citation:
Assignee:
ZEON CORP (JP)
International Classes:
C08F212/06; C08F220/22; G03F7/039; G03F7/20
Foreign References:
| JP2016012104A | 2016-01-21 |
Other References:
T. YAMAGUCHI ET AL.: "Molecular weight effect on line -edge roughness", PROCEEDINGS OF SPIE, vol. 5039, 2003, pages 1212 - 1219
KATSUYA OKUBO ET AL.: "Cho Bisai Kako-yo Denshisen Polymer Resist no Kaihatsu to Hyoka", POLYMER MATERIAL FORUM KOEN YOKOSHU, vol. 21, 2012, pages 38
KATSUYA OKUBO ET AL.: "Cho Bisai Kako-yo Denshisen Polymer Resist no Kaihatsu to Hyoka", POLYMER MATERIAL FORUM KOEN YOKOSHU, vol. 21, 2012, pages 38
Attorney, Agent or Firm:
SUGIMURA, KENJI (JP)
Kenji Sugimura (JP)
Kenji Sugimura (JP)
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