Title:
POSITIVE RESIST COMPOSITION AND METHOD FOR FORMATION OF RESIST PATTERN
Document Type and Number:
WIPO Patent Application WO/2024/070671
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a positive resist composition that can form a resist pattern that exhibits an excellent clarity and resolution. A positive resist composition according to the present invention comprises a polymer, a phenolic compound, and a solvent. The polymer is a main chain scission type and contains a monomer unit (A) represented by general formula (I). The phenolic compound has at least two groups represented by general formula (II). In general formula (I), R is a hydrogen atom or a possibly substituted alkyl group, Ar is an aromatic hydrocarbon group, W is an acidic group, and p is an integer equal to or greater than 1. In general formula (II), R1 is a hydrocarbon group, q is 1 or 2, and r is 1 or 2.
Inventors:
SATO NOBUHIRO (JP)
Application Number:
PCT/JP2023/033240
Publication Date:
April 04, 2024
Filing Date:
September 12, 2023
Export Citation:
Assignee:
ZEON CORP (JP)
International Classes:
G03F7/039; C08F8/50; C08F12/14; C08F20/10; C08F20/44; C08F20/52; G03F7/004; G03F7/20
Domestic Patent References:
| WO2021153466A1 | 2021-08-05 |
Foreign References:
| JP2006276688A | 2006-10-12 | |||
| JP2020016699A | 2020-01-30 | |||
| JP2005275283A | 2005-10-06 | |||
| JP2001201854A | 2001-07-27 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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