POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

WIPO Patent Application WO/2004/059392

A1

A positive resist composition containing a resin component (A) which has a group suppressing the solubility thereof into an alkali and undergoing dissociation on the action of an acid and thus exhibits such alkali solubility that is increased by the action of an acid, and an acid generating component (B) which generates an acid on the exposure to a light, wherein the resin component (A) is a copolymer comprising a first constituting unit (a1) derived from hydroxystyrene and a second constituting unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, wherein 10 to 25 mole % of the sum of the hydroxyl group in the constituting unit (a1) and the alcoholic hydroxyl group in the constituting unit (a2) is protected by the above-mentioned group, and wherein the copolymer before the protection by the above-mentioned group has a mass average molecular mass of 2000 to 8500; and a method for forming a pattern using the positive resist composition. The positive resist composition allows the achievement of the reduction of the development defect in combination with good performance for resolution.

SATO KAZUFUMI (JP)
HAGIHARA MITSUO (JP)
KAWANA DAISUKE (JP)

PCT/JP2003/016266

July 15, 2004

December 18, 2003

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TOKYO OHKA KOGYO CO LTD (JP)
SATO KAZUFUMI (JP)
HAGIHARA MITSUO (JP)
KAWANA DAISUKE (JP)

G03F7/00; G03F7/004; G03F7/039; (IPC1-7): G03F7/039

WO2001073512A1	2001-10-04
WO2000046640A1	2000-08-10

GB2356258A	2001-05-16
EP1357428A1	2003-10-29
JP2002241442A	2002-08-28
JP2001274062A	2001-10-05
JPH0669118A	1994-03-11
JPH11119443A	1999-04-30
JPH11168052A	1999-06-22

Tanai, Sumio (Yaesu Chuo-ku, Tokyo, JP)

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