Title:
POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2019/044177
Kind Code:
A1
Abstract:
The present invention addresses the problem of improving the productivity of a power semiconductor device while suppressing deterioration of the heat dissipation performance thereof. A manufacturing method of a power semiconductor device according to the present invention is a manufacturing method of a power semiconductor device which is provided with a conductive member having a first surface and a second surface that is provided on a side opposite to the first surface, and a power semiconductor element connected to the conductive member through a bonding material. This manufacturing method is provided with: a first step for pressing the conductor member so as to form a convex portion on the second surface by pressing a portion of the first surface while leaving a portion that is flush with the first surface to form a concave portion; a second step for disposing the power semiconductor element on the top surface of the convex portion so as to face the concave portion of the first surface and the portion on which the concave portion is not formed, and for joining the convex portion and the power semiconductor element through the bonding material; and a third step for filling at least the concave portion with a sealing material.
Inventors:
KUBOKI TAKASHI (JP)
KAWAHARA KEIJI (JP)
KONNO TAKESHI (JP)
KAWAHARA KEIJI (JP)
KONNO TAKESHI (JP)
Application Number:
PCT/JP2018/025813
Publication Date:
March 07, 2019
Filing Date:
July 09, 2018
Export Citation:
Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
H02M7/48; H01L21/60; H01L23/28; H01L23/29; H01L23/48; H01L25/07; H01L25/18
Foreign References:
| JP2013027203A | 2013-02-04 | |||
| JP2013059790A | 2013-04-04 | |||
| JP2005012163A | 2005-01-13 | |||
| JP2007006575A | 2007-01-11 | |||
| JP2013219194A | 2013-10-24 |
Attorney, Agent or Firm:
TODA Yuji (JP)
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