Title:
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/130374
Kind Code:
A1
Abstract:
This power semiconductor device 100 comprises: a low resistance semiconductor layer 112; an n--type drift layer 114; a p-type base region 116; a plurality of trenches 118; a gate insulating film 120; a gate electrode 122; an n+-type source region 124; an interlayer insulating film 126; two or more contact holes 128 formed between each two adjacent trenches 118; metal plugs 130 filling the interiors of the respective contact holes 128 with metals; p+-type diffusion regions 132 which are in contact with the bottom faces of the metal plugs 130; and a source electrode 134 formed on the interlayer insulating film 126 and electrically connected to the base region 116, the source region 124, and the p+-type diffusion region 132 via the metal plugs 130. With the present invention, a power semiconductor device can be provided which satisfies demands for cost reduction and miniaturization of electronic equipment and which is highly resistant to breakdown
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Inventors:
ARAI DAISUKE (JP)
KITADA MIZUE (JP)
ASADA TAKESHI (JP)
YAMAGUCHI TAKESHI (JP)
SUZUKI NORIAKI (JP)
KITADA MIZUE (JP)
ASADA TAKESHI (JP)
YAMAGUCHI TAKESHI (JP)
SUZUKI NORIAKI (JP)
Application Number:
PCT/JP2016/052631
Publication Date:
August 03, 2017
Filing Date:
January 29, 2016
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L29/78
Foreign References:
| JP2015185646A | 2015-10-22 | |||
| JP2006294853A | 2006-10-26 | |||
| JP2007149867A | 2007-06-14 | |||
| JP2013219171A | 2013-10-24 |
Attorney, Agent or Firm:
MATSUO, Nobutaka (JP)
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