Title:
POWER SEMICONDUCTOR DEVICE, RECTIFIER DEVICE, AND POWER SOURCE DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/092089
Kind Code:
A1
Abstract:
This power semiconductor device is configured using a semiconductor chip (10) of a p-substrate positive electrode element or an n-substrate negative electrode element, but in the case of a semiconductor chip (10) of a p-substrate positive electrode element, the primary surface of the semiconductor chip (10), at the side closer to a p-n junction (13) is joined to the top surface of a base electrode body (30) with a joining material (41) therebetween, and a lead electrode body (20) is joined to the top of the other primary surface of the semiconductor chip (10) with a joining material (40) therebetween. Also, an insulating protective film (50) is formed at the end lateral surfaces of the semiconductor chip (10), and furthermore, a sealing resin body (60) is formed to the outside thereof.
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Inventors:
ONDA TOMOHIRO (JP)
ISHIKAWA KOUICHI (JP)
TAKEDA TSUBASA (JP)
ISHIKAWA KOUICHI (JP)
TAKEDA TSUBASA (JP)
Application Number:
PCT/JP2013/083109
Publication Date:
June 19, 2014
Filing Date:
December 10, 2013
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L29/861; H01L21/312; H01L23/29; H01L23/31; H01L25/11; H01L29/868; H02M7/06
Foreign References:
| JPS63150954A | 1988-06-23 | |||
| JP2012152087A | 2012-08-09 | |||
| JPH1167759A | 1999-03-09 | |||
| JPH08204066A | 1996-08-09 | |||
| JP2002190553A | 2002-07-05 | |||
| JP2002261230A | 2002-09-13 |
Attorney, Agent or Firm:
ISONO Michizo (JP)
Michizo Isono (JP)
Michizo Isono (JP)
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