Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/147352
Kind Code:
A1
Abstract:
The present invention relates to a power semiconductor device, and is provided with: a first conductivity-type silicon carbide semiconductor layer; a switching device formed on the silicon carbide semiconductor layer; a second conductivity-type electric field relaxation impurity region, which is formed in a terminal portion of a switching device forming region, and which relaxes an electric field of the terminal portion; and a first conductivity-type added region, which is provided between second conductivity-type well regions of a plurality of unit cells constituting the switching device, and at least on the outer side of the electric field relaxation impurity region, and which has an impurity concentration higher than that of the silicon carbide semiconductor layer.
Inventors:
TARUI YOICHIRO (JP)
TANIOKA TOSHIKAZU (JP)
ORITSUKI YASUNORI (JP)
TANIOKA TOSHIKAZU (JP)
ORITSUKI YASUNORI (JP)
Application Number:
PCT/JP2015/058102
Publication Date:
September 22, 2016
Filing Date:
March 18, 2015
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/12; H01L29/739
Domestic Patent References:
| WO2012063310A1 | 2012-05-18 | |||
| WO2012081664A1 | 2012-06-21 | |||
| WO2010001201A1 | 2010-01-07 |
Foreign References:
| JP2011258640A | 2011-12-22 | |||
| JP2007184434A | 2007-07-19 | |||
| JP2007266520A | 2007-10-11 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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