Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/181261
Kind Code:
A1
Abstract:
The present invention addresses the problem of improving production yield of power semiconductor devices. This power semiconductor device comprises: a first conductor part, which is a conductor; a second conductor part, which is a conductor different from the first conductor part; a first semiconductor element mounted on the first semiconductor part and constituting an upper arm of an inverter circuit; a second semiconductor element mounted on the first conductor part and constituting a lower arm of the inverter circuit; and an AC terminal conductor for transmitting AC current to the upper arm and the lower arm. A portion of the AC terminal conductor is disposed in a space between the first conductor part and the second conductor part and serves as a current transmission path between said first conductor part and said second conductor part.
Inventors:
TSUYUNO NOBUTAKE (JP)
IDE EIICHI (JP)
HIRAO TAKASHI (JP)
NAMBA AKIHIRO (JP)
ISHII TOSHIAKI (JP)
HOZOJI HIROSHI (JP)
MATSUSHITA AKIRA (JP)
IDE EIICHI (JP)
HIRAO TAKASHI (JP)
NAMBA AKIHIRO (JP)
ISHII TOSHIAKI (JP)
HOZOJI HIROSHI (JP)
MATSUSHITA AKIRA (JP)
Application Number:
PCT/JP2019/004343
Publication Date:
September 26, 2019
Filing Date:
February 07, 2019
Export Citation:
Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
H02M7/48; H01L23/36; H01L25/07; H01L25/18
Foreign References:
| JP2006066895A | 2006-03-09 | |||
| JP2004140068A | 2004-05-13 |
Attorney, Agent or Firm:
TODA Yuji (JP)
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