Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/100377
Kind Code:
A1
Abstract:
The present invention improves the current detection precision of a power semiconductor device. A power semiconductor device according to the present invention comprises: an insulating substrate on one side of which is disposed a first conductor layer; a semiconductor element; a main terminal connected to the first conductor layer; and a current-detecting element. The current-detecting element comprises a front electrode connected to the semiconductor element, via a conductor member, on one side thereof, and a rear electrode connected to the first conductor layer on the other side thereof. Defining the side, of the current-detecting element, closest to the main terminal as a first side and a side at a position facing the first side as a second side, a connection between a detector terminal and the rear electrode is provided on the side closer to the second side.
Inventors:
HIRAO TAKASHI (JP)
NAGASAKI HIRONORI (JP)
NAGASAKI HIRONORI (JP)
Application Number:
PCT/JP2019/033728
Publication Date:
May 22, 2020
Filing Date:
August 28, 2019
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L25/07; H01L25/18; H02M7/48
Domestic Patent References:
| WO2018180137A1 | 2018-10-04 |
Foreign References:
| JP2011249475A | 2011-12-08 | |||
| JP2018107364A | 2018-07-05 | |||
| JP2018112472A | 2018-07-19 | |||
| JP2006140217A | 2006-06-01 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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