Title:
PREPARATION METHOD FOR COLUMNAR CAPACITOR ARRAY STRUCTURE, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/024428
Kind Code:
A1
Abstract:
The present application belongs to the technical field of semiconductor manufacturing. Provided are a preparation method for a columnar capacitor array structure, and a semiconductor structure. In the preparation method for a columnar capacitor array structure in the present application, before mask layer removal, the thickness of a mask layer in a peripheral area is adjusted to be the same as the thickness of a mask layer in an array area, thereby preventing the loss of a top support layer caused by different thicknesses of the mask layers. In addition, in the preparation method of the present application, the thickness of the top support layer is increased by further using a supplementary support layer, so as to increase the level of support of the top support layer, thereby further preventing the occurrence of a situation in which a columnar capacitor inclines due to the level of support of the top support layer being insufficient.
Inventors:
WAN QIANG (CN)
XIA JUN (CN)
ZHAN KANGSHU (CN)
LI SEN (CN)
LIU TAO (CN)
XU PENGHUI (CN)
XIA JUN (CN)
ZHAN KANGSHU (CN)
LI SEN (CN)
LIU TAO (CN)
XU PENGHUI (CN)
Application Number:
PCT/CN2022/072658
Publication Date:
March 02, 2023
Filing Date:
January 19, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242; H01L27/108
Foreign References:
| CN113707614A | 2021-11-26 | |||
| CN113497187A | 2021-10-12 | |||
| CN110010604A | 2019-07-12 | |||
| CN112951768A | 2021-06-11 | |||
| CN112908968A | 2021-06-04 | |||
| US20140134839A1 | 2014-05-15 | |||
| CN111725139A | 2020-09-29 | |||
| US20170345886A1 | 2017-11-30 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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