Title:
PREPARATION METHOD FOR DOPED VANADIUM DIOXIDE MICROTUBE ARRAY, VANADIUM DIOXIDE MICROTUBE ARRAY, AND VANADIUM DIOXIDE MICROTUBE
Document Type and Number:
WIPO Patent Application WO/2020/259423
Kind Code:
A1
Abstract:
A preparation method for a doped vanadium dioxide microtube array, a vanadium dioxide microtube array, and a vanadium dioxide microtube. The method comprises: step 1: according to a preset doping ratio, respectively weighing a metal vanadium raw material and a dopant material for doping into metal vanadium; step 2: melting the metal vanadium raw material and the dopant material into a uniformly mixed block; step 3: cutting the block into flakes to obtain doped vanadium flakes; step 4: heating the vanadium flakes to 1,100-1,900ºC by using a current and maintaining the temperature for 10-20 seconds; step 5: cooling the vanadium flakes to room temperature naturally, and obtaining a vanadium dioxide microtube array composed of doped vanadium dioxide microtubes on the surface of the vanadium flakes, the vanadium dioxide microtube array standing on the surface of the vanadium flakes, and the vanadium dioxide microtube having a hollow structure with a nearly rectangular cross section. The doping method is simple and easy to implement, low in cost, low in equipment requirements, and short in period, facilitating implementation of industrialization.
Inventors:
ZHAO CHUNWANG (CN)
LI ZIJIAN (CN)
LI ZIJIAN (CN)
Application Number:
PCT/CN2020/097310
Publication Date:
December 30, 2020
Filing Date:
June 22, 2020
Export Citation:
Assignee:
UNIV SHANGHAI MARITIME (CN)
International Classes:
C30B29/16; C30B29/66; C30B31/00; C30B35/00; H01M4/485; H01M10/0525; H01M10/054
Domestic Patent References:
| WO1998026871A1 | 1998-06-25 |
Foreign References:
| CN110541200A | 2019-12-06 | |||
| CN110184560A | 2019-08-30 | |||
| CN102491263A | 2012-06-13 |
Other References:
MA SHUXIANG ET AL.: "Recrystallization of Single-Crystalline VO2 Microtube Arrays on V2O5 Substrate", CRYSTAL, vol. 10, no. 2,, 23 January 2020 (2020-01-23), XP055772914, ISSN: 2073-4352, DOI: 2
Attorney, Agent or Firm:
SUNSHINEIP INTELLECTUAL PROPERTY LAW FIRM (CN)
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