Title:
PREPARATION METHOD FOR MRAM
Document Type and Number:
WIPO Patent Application WO/2023/124142
Kind Code:
A1
Abstract:
The present invention provides a preparation method for a MRAM. The preparation method comprises: providing a substrate, the substrate comprising an array region and a logic region; depositing a dielectric on the surface of the substrate to form a first dielectric layer and a logic region dielectric layer of the array region, and then forming a magnetic tunnel junction bottom electrode, a magnetic tunnel junction material layer and a dielectric hard mask layer in the array region, and exposing the logic region dielectric layer; forming a second dielectric layer on the dielectric hard mask layer of the array region, and supplementing the logic region dielectric layer; performing photolithography and etching, forming, in the array region, a first through hole for exposing the magnetic tunnel junction material layer, and forming, in the logic region, a second through hole for exposing a bottom metal line; filling metal in the first through hole and the second through hole, and performing planarization processing to form a metal hard mask layer and a logic region metal through hole in the array region; and etching the magnetic tunnel junction material layer on the basis of the metal hard mask layer to form a magnetic tunnel junction in the array region.
Inventors:
YU ZHI MENG (CN)
HE SHI KUN (CN)
HE SHI KUN (CN)
Application Number:
PCT/CN2022/114304
Publication Date:
July 06, 2023
Filing Date:
August 23, 2022
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/12
Foreign References:
| CN110970550A | 2020-04-07 | |||
| CN108232009A | 2018-06-29 | |||
| US20070023806A1 | 2007-02-01 | |||
| US20180182809A1 | 2018-06-28 | |||
| US20180197914A1 | 2018-07-12 | |||
| CN111933790A | 2020-11-13 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
Download PDF: