Title:
PROCESS FOR ANISOTROPIC ETCHING OF SEMICONDUCTORS
Document Type and Number:
WIPO Patent Application WO/2011/057047
Kind Code:
A3
Abstract:
A method is provided for anisotropically etching semiconductor materials such as II-VI and III-V semiconductors. The method involves repeated cycles of plasma sputter etching of semiconductor material with a non-reactive gas through an etch mask, followed by passivation of the side walls by plasma polymerization using a polymer former. Using this procedure small pixels in down-converted light-emitting diode devices can be fabricated.
Inventors:
SMITH TERRY L (US)
ZHANG JUN-YING (US)
ZHANG JUN-YING (US)
Application Number:
PCT/US2010/055573
Publication Date:
October 27, 2011
Filing Date:
November 05, 2010
Export Citation:
Assignee:
3M INNOVATIVE PROPERTIES CO (US)
International Classes:
H01L21/3065
Domestic Patent References:
| WO2008153674A1 | 2008-12-18 |
Foreign References:
| US5501893A | 1996-03-26 | |||
| US20050136682A1 | 2005-06-23 | |||
| US20040173575A1 | 2004-09-09 |
Other References:
XEI-XI CHEN ET AL.: "Ion beam etching of InGaAs, InP, GaAs, Si, and Ge", J.OF VAC. SCI. & TECHNOL. B: MICROELECTRONICS AND NANOMETER STRUCTURES, vol. 4, no. 3, May 1986 (1986-05-01) - June 1986 (1986-06-01), pages 701 - 705, XP000810594
Attorney, Agent or Firm:
WOLF, Stephen F. et al. (Office of Intellectual Property Counsel Post Office Box 33427Saint Paul, Minnesota, US)
Download PDF:
Previous Patent: MINIMALLY INVASIVE INTERSPINOUS PROCESS SPACER IMPLANTS AND METHODS
Next Patent: FLYING SHARK
Next Patent: FLYING SHARK