Title:
PROCESS FOR FORMING FUSIBLE LINKS
Document Type and Number:
WIPO Patent Application WO2004044946
Kind Code:
A3
Abstract:
A process for forming fusible links in an integrated circuit in which the fusible links are formed in the final metallization layer simultaneously with bonding pads. The process can be applied in the fabrication of integrated circuits that employ copper metallization and low k dielectric materials. After patterning the final metal (aluminum) layer to form the fusible links (28) and the bonding pads (30), a dielectric etch stop layer (40) is formed over the final metal layer before a passivation layer (42) is deposited. The passivation layer is removed in areas over the fusible links and the bonding pads. The dielectric etch stop layer is removed either from above the bonding pads only, or from above both the bonding pads and the fusible links.
Inventors:
BARTH HANS JOACHIM
CHEN HSUEH CHUNG
CHEN JEN KON
CHEN TONG YU
HSIUNG CHIUNG SHENG
LIN YI HSIUNG
LIU CHIH CHIEN
YANG CHIH CHAO
YANG GWO SHII
CHEN HSUEH CHUNG
CHEN JEN KON
CHEN TONG YU
HSIUNG CHIUNG SHENG
LIN YI HSIUNG
LIU CHIH CHIEN
YANG CHIH CHAO
YANG GWO SHII
Application Number:
PCT/EP2003/011903
Publication Date:
February 24, 2005
Filing Date:
October 27, 2003
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AG (DE)
UNITED MICROELECTRONICS CO (CN)
UNITED MICROELECTRONICS CO (CN)
International Classes:
H01L23/525; (IPC1-7): H01L23/525
Foreign References:
| US20020037643A1 | 2002-03-28 | |||
| US6451681B1 | 2002-09-17 | |||
| US5519658A | 1996-05-21 | |||
| US20020149105A1 | 2002-10-17 | |||
| US6566171B1 | 2003-05-20 | |||
| US20030003703A1 | 2003-01-02 |
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