PROCESS FOR GROWTH OF DEFECT FREE SILICON CRYSTALS OF ARBITRARILY LARGE DIAMETERS

WIPO Patent Application WO2000000674

A3

A process for growing single crystal silicon ingots which are substantially free of agglomerated intrinsic point defects. An ingot is grown generally in accordance with the Czochralski method. No portion of the ingot cools to a temperature which is less than a temperature TA at which agglomeration of intrinsic point defects in the ingot occurs during the time the ingot is being grown. The achievement of defect free ingots is thus substantially decoupled from process parameters, such as pull rate, and system parameters, such as axial temperature gradient in the ingot.

JP2570497	NONLINEAR OPTICAL LASER ELEMENT
JP2003051504	METHOD OF MANUFACTURING SILICON WAFER INCLUDING Ar/NH3 RAPID THERMAL ANNEALING PROCESS, SILICON WAFER MANUFACTURED THEREBY, CZOCHRALSKI PULLER FOR MANUFACTURING MONOCRYSTALLINE SILICON INGOT

FALSTER ROBERT J

PCT/US1999/014285

October 10, 2002

June 25, 1999

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MEMC ELECTRONIC MATERIALS (US)

C30B15/00; C30B15/20; C30B33/00; C30B29/06; (IPC1-7): C30B15/00; C30B33/00; C30B29/06

WO1998045507A1

1998-10-15

EP0799913A1	1997-10-08
GB2137524A	1984-10-10

PATENT ABSTRACTS OF JAPAN vol. 014, no. 456 (C - 0765) 2 October 1990 (1990-10-02)
PATENT ABSTRACTS OF JAPAN vol. 016, no. 356 (C - 0969) 31 July 1992 (1992-07-31)
PATENT ABSTRACTS OF JAPAN vol. 015, no. 271 (C - 0848) 10 July 1991 (1991-07-10)

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