PROCESS FOR MAKING AIR GAP CONTAINING SEMICONDUCTING DEVICES AND RESULTING SEMICONDUCTING DEVICE

Title:

PROCESS FOR MAKING AIR GAP CONTAINING SEMICONDUCTING DEVICES AND RESULTING SEMICONDUCTING DEVICE

Document Type and Number:

WIPO Patent Application WO2003085719

Kind Code:

A3

Abstract:

A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of a relatively non-porous, organic, polymeric, insulating dielectric material (hardmask) having a density less than 2.2 g/cm<3>; and (c) decomposing the sacrificial polymeric composition such that the decomposition products permeate at least partially through the one or more hardmask layers, thereby forming at least a partial air gap within the device.

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Inventors:

TOWNSEND PAUL H III (US)
FOSTER KENNETH L (US)

Application Number:

PCT/US2003/009956

Publication Date:

July 01, 2004

Filing Date:

April 01, 2003

Export Citation:

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Assignee:

DOW GLOBAL TECHNOLOGIES INC (US)
TOWNSEND PAUL H III (US)
FOSTER KENNETH L (US)

International Classes:

H01L21/027; H01L21/311; H01L23/522; H01L21/312; H01L21/762; H01L21/768; H01L23/532; H01L21/316; (IPC1-7): H01L21/768; H01L23/482

Domestic Patent References:

WO2002019420A2	2002-03-07
WO2002019416A1	2002-03-07

Foreign References:

EP0227124A2

1987-07-01

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