Title:
PROCESS FOR PHOTORESIST DESCUMMING AND STRIPPING IN SEMICONDUCTOR APPLICATIONS BY NH3 PLASMA
Document Type and Number:
WIPO Patent Application WO2002011193
Kind Code:
A3
Abstract:
In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is disclosed for descumming residual photoresist material from areas where it is not desired after patterning of the photoresist. In another embodiment, a misaligned patterned photoresist is stripped from a semiconductor susbtrate surface. In particular, the method comprises exposing the semiconductor structure to a plasma generated from a source gas comprising NH3. A substrate voltage is utilized in both methods in order to produce anisotropic etching. In the descumming embodiment, the critical dimensions of the patterned photoresist are maintained. In the photoresist stripping embodiment, a patterned photoresist is removed without adversely affecting a partially exposed underlaying layer of an organic dielectric.
Inventors:
HSIEH CHANG LIN
CHEN HUI
YUAN JIE
YE YAN
CHEN HUI
YUAN JIE
YE YAN
Application Number:
PCT/US2001/023992
Publication Date:
June 13, 2002
Filing Date:
July 31, 2001
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
International Classes:
G03F7/42; H01L21/027; H01L21/3065; H01L21/311; G03F7/40; (IPC1-7): H01L21/027; G03F7/42; B08B7/00; H01L21/768
Domestic Patent References:
| WO2001059825A1 | 2001-08-16 |
Foreign References:
| US6080529A | 2000-06-27 | |||
| US5780359A | 1998-07-14 | |||
| US5230772A | 1993-07-27 | |||
| US6030901A | 2000-02-29 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 006, no. 259 (E - 149) 17 December 1982 (1982-12-17)
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30)
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30)
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