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Title:
PROCESS FOR PRODUCING HIGH-PURITY HEXAFLUOROPROPYLENE AND CLEANING GAS
Document Type and Number:
WIPO Patent Application WO/2008/001844
Kind Code:
A1
Abstract:
A process for industrially advantageously producing high-purity hexafluoropropylene; and a use of this high-purity hexafluoropropylene, specifically, a cleaning gas for removing deposits in a semiconductor manufacturing apparatus or liquid-crystal manufacturing apparatus. In the process for high-purity hexafluoropropylene production, crude hexafluoropropylene produced by the pyrolysis of chlorodifluoromethane is purified to thereby produce high-purity hexafluoropropylene. It comprises: a step (1) in which the crude hexafluoropropylene is brought into contact with an adsorbent comprising a zeolite having an average micropore diameter of 3.4-11 Å and/or a carbonaceous adsorbent having an average micropore diameter of 3.5-11 Å to reduce the content of chlorine compounds and/or hydrocarbons in the crude hexafluoropropylene; and a step (2) in which the hexafluoropropylene obtained in the step (1) is distilled to reduce the content of low-boiling ingredients therein.

Inventors:
OHNO HIROMOTO (JP)
OHI TOSHIO (JP)
Application Number:
PCT/JP2007/062995
Publication Date:
January 03, 2008
Filing Date:
June 28, 2007
Export Citation:
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Assignee:
SHOWA DENKO KK (JP)
OHNO HIROMOTO (JP)
OHI TOSHIO (JP)
International Classes:
C07C17/38; C07C17/383; C07C17/389; C07C21/18; C23C16/44; H01L21/205; H01L21/3065
Foreign References:
JPS6440436A1989-02-10
JPS63267736A1988-11-04
JPS51128901A1976-11-10
JP2005026409A2005-01-27
JPH1027781A1998-01-27
JPH09296271A1997-11-18
Attorney, Agent or Firm:
SUZUKI, Shunichiro (Gotanda Yamazaki Bldg. 6F13-6, Nishigotanda 7-chome, Shinagawa-k, Tokyo 31, JP)
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