Title:
PROCESS FOR PRODUCING THIN-FILM TRANSISTOR, LASER CRYSTALLIZATION APPARATUS AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2007/108157
Kind Code:
A1
Abstract:
A process for producing a thin-film transistor (TFT), in which in laser crystallization
of an amorphous semiconductor film, even when multiple-line scanning is conducted,
there is no disorder of crystal grains at line breaks and crystal of any particular
line continuous from the crystal of preceding line is formed, thereby ensuring
an uniformity of TFT performance at relevant area, and in which even when the TFT
is disposed along either the length or the width of substrate, the performance
thereof can be equalized; and a related laser crystallization apparatus and
semiconductor device. There is provided a process for producing a thin-film
transistor having a crystalline semiconductor film superimposed on a substrate,
comprising the step of repeating long-beam irradiation and transfer so as to
carry out fusing and crystallization of any amorphous semiconductor film on
the substrate, thereby forming a crystalline semiconductor film, wherein the
long beam is shifted in a direction oblique to the direction of long axis thereof.
Inventors:
MAEKAWA MASASHI
Application Number:
PCT/JP2006/321748
Publication Date:
September 27, 2007
Filing Date:
October 31, 2006
Export Citation:
Assignee:
SHARP KK (JP)
MAEKAWA MASASHI
MAEKAWA MASASHI
International Classes:
H01L21/268; H01L21/20; H01L21/336; H01L29/786
Foreign References:
| US20020177259A1 | 2002-11-28 | |||
| JP2004214614A | 2004-07-29 | |||
| JP2004207691A | 2004-07-22 | |||
| JP2005217213A | 2005-08-11 |
Attorney, Agent or Firm:
YASUTOMI, Yasuo et al. (5-36 Miyahara 3-chome, Yodogawa-k, Osaka-shi Osaka 03, JP)
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