Title:
PROCESSING APPARATUS AND CLEANING METHOD
Document Type and Number:
WIPO Patent Application WO2002012585
Kind Code:
A3
Abstract:
In a chamber (11), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber (11) is cleaned up using a gas containing NF3. A manometer (28) is prepared for the chamber (11). An end point of cleaning of the chamber (11) is detected by monitoring the pressure inside the chamber (11).
Inventors:
FUKIAGE NORIAKI (JP)
Application Number:
PCT/JP2001/006785
Publication Date:
April 18, 2002
Filing Date:
August 07, 2001
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
FUKIAGE NORIAKI (JP)
FUKIAGE NORIAKI (JP)
International Classes:
B08B7/00; C23C16/44; C23F4/00; H01L21/302; H01L21/3065; H01L21/31; (IPC1-7): C23C16/44
Domestic Patent References:
| WO2000031773A1 | 2000-06-02 | |||
| WO2001077406A2 | 2001-10-18 |
Foreign References:
| EP0843348A2 | 1998-05-20 | |||
| US6079426A | 2000-06-27 | |||
| EP0741406A2 | 1996-11-06 | |||
| US5902403A | 1999-05-11 | |||
| US5985032A | 1999-11-16 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 013, no. 280 (E - 779) 27 June 1989 (1989-06-27)
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