Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PROCESSING LIQUID, CHEMICAL/MECHANICAL POLISHING METHOD, AND SEMICONDUCTOR SUBSTRATE PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/210310
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a processing liquid that is for semiconductor substrates and that provides excellent corrosion prevention performance to metal-containing layers. The present invention also addresses the problem of providing a chemical/mechanical polishing method and a semiconductor substrate processing method.　The processing liquid according to the present invention is for semiconductor substrates, contains water and component A having two or more onium structures per molecule, and has a pH of 6.0-13.5 at 25°C.

More Like This:
JP7322704Composition liquid that suppresses damage to cobalt, alumina, interlayer insulating film, and silicon nitride, and cleaning method using the same
WO/1998/007809HARD SURFACE CLEANERS COMPRISING $g(b)-KETOESTER PRO-FRAGRANCES
JP4149258Liquid cleaning agent composition
Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2021/010000
Publication Date:
October 21, 2021
Filing Date:
March 12, 2021
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FUJIFILM ELECTRONIC MAT CO LTD (JP)
International Classes:
C11D17/08; B24B37/00; C09K3/14; C11D3/12; C11D3/26; C11D3/34; C11D3/36; C11D3/43; C11D7/20; C11D7/26; C11D7/32; C11D7/34; C11D7/36; C11D7/50; H01L21/304
Domestic Patent References:
WO2020166677A12020-08-20
Foreign References:
JP2010251680A2010-11-04
JP2008135746A2008-06-12
JP2013098557A2013-05-20
JP2008244450A2008-10-09
JP2013042131A2013-02-28
JP2020203980A2020-12-24
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: REINFORCEMENT FIXTURE

Next Patent: EXHAUST GAS TREATMENT SYSTEM AND EXHAUST GAS TREATMENT METHOD