Title:
PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2021/009838
Kind Code:
A1
Abstract:
The present invention has a step for forming a film which is embedded in a recess formed on a surface of a substrate by performing, for a predetermined number of times, a cycle including (a) a step for feeding a quasi-catalyst to the substrate in a treatment chamber, (b) a step for discharging the quasi-catalyst remaining in the treatment chamber, (c) a step for feeding a raw material to the substrate in the treatment chamber, and (d) a step for discharging the raw material remaining in the treatment chamber, wherein in (a), the quasi-catalyst is adsorbed to the surface of the substrate under conditions which cause unsaturation of chemical adsorption of the quasi-catalyst to the surface of the substrate.
Inventors:
NAKATANI KIMIHIKO (JP)
Application Number:
PCT/JP2019/027901
Publication Date:
January 21, 2021
Filing Date:
July 16, 2019
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/455; H01L21/318
Domestic Patent References:
| WO2011125395A1 | 2011-10-13 |
Foreign References:
| JP2019110263A | 2019-07-04 | |||
| JP2016034042A | 2016-03-10 | |||
| JP2004023043A | 2004-01-22 | |||
| JP2016157884A | 2016-09-01 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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