Title:
PROTECTION CIRCUIT FOR HIGH TEMPERATURE REVERSE BIAS TEST
Document Type and Number:
WIPO Patent Application WO/2024/000186
Kind Code:
A1
Abstract:
A protection circuit (20) for protecting an electronic device (10) under a high temperature reverse bias (HTRB) test is provided. The protection circuit (20) comprises: a switch (22) configured to connect/disconnect the protection circuit (20) to/from the electronic device (10) based on a switching signal; a current-sensing circuit (24) configured to sense a drain-source leakage current flowing through a drain-source junction of the electronic device (10) and generate a current-sensing signal; and a driving circuit (26) configured to receive the current-sensing signal from the current-sensing circuit (24) and generate a driving signal for switching on/off the switch (22) such that the drain-source leakage current is blocked by the switch (22) when the current-sensing signal is higher than a reference voltage.
Inventors:
LIN YIMING (CN)
HU KAI (CN)
SHENG JIANJIAN (CN)
HU KAI (CN)
SHENG JIANJIAN (CN)
Application Number:
PCT/CN2022/102008
Publication Date:
January 04, 2024
Filing Date:
June 28, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
G01R31/327; G01R31/26
Foreign References:
| CN114646873A | 2022-06-21 | |||
| CN214622914U | 2021-11-05 | |||
| CN202794445U | 2013-03-13 | |||
| CN114545139A | 2022-05-27 | |||
| CN111751695A | 2020-10-09 | |||
| CN109406980A | 2019-03-01 | |||
| CN113359000A | 2021-09-07 | |||
| US20130332750A1 | 2013-12-12 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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