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Title:
PROXIMITY EXPOSURE METHOD
Document Type and Number:
WIPO Patent Application WO/2018/061544
Kind Code:
A1
Abstract:
Disclosed is a proximity exposure method wherein: a mask (M), in which mask patterns (31) larger than the resolution limit of a resist (R) are formed, is prepared with respect to a resist pattern (43) having the smallest pitch (P) that is equal to or smaller than the resolution limit of the resist (R); in a first exposure step, after the mask patterns (31) are transferred to a workpiece (W) by means of exposure, the mask (M) and the workpiece (W) are relatively step-moved by the pitch (P) of the resist pattern (43); and in a second exposure step, the mask patterns (31) are transferred again to the workpiece (W) by means of exposure.

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Inventors:
TOGASHI TAKUMI (JP)
HARADA TOMONORI (JP)
Application Number:
PCT/JP2017/030198
Publication Date:
April 05, 2018
Filing Date:
August 23, 2017
Export Citation:
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Assignee:
V TECH CO LTD (JP)
International Classes:
G03F7/20; G03F1/42
Foreign References:
JP2003332194A2003-11-21
JP2014164054A2014-09-08
JP2011034704A2011-02-17
JP2008209889A2008-09-11
JP2008191341A2008-08-21
JP2002164282A2002-06-07
JP2002100557A2002-04-05
Attorney, Agent or Firm:
EIKOH PATENT FIRM, P.C. (JP)
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