PULL UP FOR HIGH SPEED STRUCTURES - ABROSIMOV IGOR ANATOLIEVICH

Title:

PULL UP FOR HIGH SPEED STRUCTURES

Document Type and Number:

WIPO Patent Application WO2003100974

Kind Code:

A3

Abstract:

The present invention relates to a pull-up structure with variable strength, which combines a resistor network with N type MOS transistors. According to the invention, the pull up structure comprises a n-channel type MOSFET (51) with a resistor (52) in parallel. Alternatively, a resistor (54) is connected between the terminal of the pull up and a voltage supply. This allows the pull up to be varied to compensate for process and temperature variations around a predefined pull-up strength, and at the same time provides low parasitic capacitance and a good dynamic response of the pull-up structure.

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Inventors:

ABROSIMOV IGOR ANATOLIEVICH (RU)

Application Number:

PCT/RU2003/000242

Publication Date:

February 05, 2004

Filing Date:

May 28, 2003

Export Citation:

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Assignee:

ABROSIMOV IGOR ANATOLIEVICH (RU)

International Classes:

H03K19/017; (IPC1-7): H03K19/017

Foreign References:

EP0380095A2	1990-08-01
US4647797A	1987-03-03
US4598216A	1986-07-01
EP0188709A1	1986-07-30
US5250854A	1993-10-05
US5301369A	1994-04-05

Other References:

PATENT ABSTRACTS OF JAPAN vol. 0173, no. 37 (E - 1388) 25 June 1993 (1993-06-25)
PATENT ABSTRACTS OF JAPAN vol. 0090, no. 95 (E - 310) 24 April 1985 (1985-04-24)

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