QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

WIPO Patent Application WO/2012/140816

A1

The present invention is a method for producing a quartz glass crucible including the steps of: preparing a substrate for a crucible made of quartz glass and having a crucible shape, producing a synthetic quartz glass material by a direct method or a soot method; processing the synthetic quartz glass material into a crucible shape without pulverizing it; and using heat treatment to bond the inner wall of the substrate for a crucible to the exterior wall of the synthetic quartz glass material processed into a crucible shape, via a silica powder. Provided are a quartz glass crucible capable of avoiding dislocation of a silicon single crystal during production of the silicon single crystal, having high heat resistance, and suppressing decrease of productivity and yield, a method for producing the same, and a method for producing a silicon single crystal using the quartz glass crucible.

KIMURA AKIHIRO (JP)
HOSHI RYOJI (JP)
MITAMURA NOBUAKI (JP)
KAMADA HIROYUKI (JP)

PCT/JP2012/000975

October 18, 2012

February 15, 2012

Click for automatic bibliography generation  

SHINETSU HANDOTAI KK (JP)
KIMURA AKIHIRO (JP)
HOSHI RYOJI (JP)
MITAMURA NOBUAKI (JP)
KAMADA HIROYUKI (JP)

C30B15/10; C03B20/00; C30B29/06

WO2011019012A1

2011-02-17

JP2004002082A	2004-01-08
JPS62175077U	1987-11-06

YORIYUKI MURAKAWA, HISHOSHITSU SILICA ZAIRYO OYO HANDBOOK, 1999, pages 25

YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)

View/Download PDF      PDF Help

Previous Patent: ACTIVE MATRIX SUBSTRATE, ACTIVE MATRIX SUBSTRATE INSPECTION METHOD, DISPLAY PANEL, AND DISPLAY PANEL...

Next Patent: TENSIONER