Title:
RECTIFIER CIRCUIT, AND SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2023/032407
Kind Code:
A1
Abstract:
Disclosed is a rectifier circuit that makes it possible to achieve a high breakdown voltage while suppressing an increase in power loss, and a semiconductor device and a power supply device using this rectifier circuit. This rectifier circuit supplies a current in one direction, said rectifier circuit comprising: a first enhancement type MOSFET (QH1); a second enhancement type MOSFET (QL1) that is connected in series to the first MOSFET and that has a lower breakdown voltage than the first MOSFET; a control circuit (1) that causes the first MOSFET and the second MOSFET to perform a rectification operation; and a capacitor (C1) that supplies power to the control circuit and that is charged by the voltage between the drain and the source of the second MOSFET.
Inventors:
MIWA YOSHIHIRO (JP)
SHOJI HIROYUKI (JP)
SAKANO JUNICHI (JP)
UTSUMI TOMOYUKI (JP)
HIGUCHI TAKAHIRO (JP)
SHOJI HIROYUKI (JP)
SAKANO JUNICHI (JP)
UTSUMI TOMOYUKI (JP)
HIGUCHI TAKAHIRO (JP)
Application Number:
PCT/JP2022/023631
Publication Date:
March 09, 2023
Filing Date:
June 13, 2022
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H02M7/21
Foreign References:
| JP2021068812A | 2021-04-30 | |||
| JP2019129656A | 2019-08-01 | |||
| JPH11146640A | 1999-05-28 | |||
| JP2011151788A | 2011-08-04 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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