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Title:
REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, AND SUBSTRATE WITH FUNCTION FILM FOR THE MASK BLANK
Document Type and Number:
WIPO Patent Application WO/2008/072706
Kind Code:
A1
Abstract:
Provided is a substrate having a conductive film for an EUV mask blank. The substrate prevents particle generation due to friction between an electrostatic chuck and the substrate. A substrate having a multilayer reflection film, and an EUV mask blank which use such substrate having the conductive film are also provided. The substrate having the conductive film is to be used for manufacturing the reflective mask blank for EUV lithography. The conductive film contains chromium (Cr) and nitrogen (N), the average concentration of N in the conductive film is 0.1at% or more but not more than 40at%, at least the surface crystalline status of the conductive film is amorphous, the sheet resistance value of the conductive film is 27Ω/□ or lower, and the surface roughness (rms) of the conductive film is 0.5nm or less.

Inventors:
HAYASHI KAZUYUKI (JP)
KADOWAKI KAZUO (JP)
SUGIYAMA TAKASHI (JP)
Application Number:
PCT/JP2007/074052
Publication Date:
June 19, 2008
Filing Date:
December 13, 2007
Export Citation:
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Assignee:
ASAHI GLASS CO LTD (JP)
HAYASHI KAZUYUKI (JP)
KADOWAKI KAZUO (JP)
SUGIYAMA TAKASHI (JP)
International Classes:
H01L21/027; G03F1/24
Domestic Patent References:
WO2007069417A12007-06-21
Foreign References:
JP2002222764A2002-08-09
JP2006049910A2006-02-16
JP2005093723A2005-04-07
JP2005210093A2005-08-04
JP2006093454A2006-04-06
JP2006324268A2006-11-30
JP2004320035A2004-11-11
Attorney, Agent or Firm:
SENMYO, Kenji et al. (SIA Kanda Square17, Kanda-konyach, Chiyoda-ku Tokyo 35, JP)
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