Title:
REFLECTIVE MASK BLANK, REFLECTIVE MASK, REFLECTIVE MASK MANUFACTURING METHOD, AND REFLECTIVE MASK CORRECTION METHOD
Document Type and Number:
WIPO Patent Application WO/2021/125048
Kind Code:
A1
Abstract:
Provided are a reflective mask blank, a reflective mask, a reflective mask manufacturing method, and a reflective mask correction method that can shorten the time needed for electron beam corrective etching, even when a material that is used in a thin film absorption film has a large extinction coefficient k with regard to EUV light. A reflective photomask blank (10) according to this embodiment has a substrate (1), a multilayered reflection film (2), a capping layer (3), and a low reflection section (5). The low reflection section (5) is obtained by alternately layering absorption films (A) and absorption films (B). The corrective etching rate of the absorption films (A) during electron beam correction is greater than the corrective etching rate of the absorption films (B) during electron beam correction. The absorption films (B) include one or more elements selected from tin, indium, platinum, nickel, tellurium, silver, and cobalt.
Inventors:
MATSUI KAZUAKI (JP)
KOJIMA YOSUKE (JP)
KOJIMA YOSUKE (JP)
Application Number:
PCT/JP2020/046082
Publication Date:
June 24, 2021
Filing Date:
December 10, 2020
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD (JP)
International Classes:
G03F1/24; C23C14/06; G03F1/48; G03F1/52; G03F1/58; H01L21/302
Foreign References:
| JP2015008283A | 2015-01-15 | |||
| JP2004537758A | 2004-12-16 | |||
| JP2011238801A | 2011-11-24 | |||
| JP2010103463A | 2010-05-06 | |||
| JP2007273678A | 2007-10-18 |
Other References:
See also references of EP 4080283A4
Attorney, Agent or Firm:
HIROSE Hajime et al. (JP)
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