REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK

WIPO Patent Application WO/2021/221123

A1

The purpose of the present invention is to provide a reflective photomask blank and a reflective photomask which have high resistance to hydrogen radicals and which have improved transfer properties by minimally suppressing projection effects. The reflective photomask blank (10) according to an embodiment of the present invention is provided with a substrate (1), a reflective part (7), and a low reflective part (8). The low reflective part (8) is formed of an absorption layer (4) and an outermost layer (5). The absorption layer (4) contains a total of 50 atom% or more of at least one type selected from a first material group, and the outermost layer (5) contains a total of 80 atom% or more of at least one type selected from a second material group. The first material group includes indium, tin, tellurium, cobalt, nickel, platinum, silver, copper, zinc, and bismuth, and oxides, nitrides, and oxynitrides thereof. The second material group includes tantalum, aluminum, ruthenium, molybdenum, zirconium, titanium, zinc, and vanadium, and oxides, nitrides, oxynitrides, and indium oxides thereof.

GODA AYUMI (JP)
YAMAGATA YUTO (JP)
NAKANO HIDEAKI (JP)
ICHIKAWA KENJIRO (JP)

PCT/JP2021/017056

November 04, 2021

April 28, 2021

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TOPPAN INC (JP)

G03F1/24; C23C14/06; G03F1/58

WO1997044709A1	1997-11-27
WO1997044710A1	1997-11-27

JP2006190900A	2006-07-20
JPS52139375A	1977-11-21
JP2019139085A	2019-08-22
JP2008041740A	2008-02-21
JP2007250613A	2007-09-27
JP6408790B2	2018-10-17

HIROSE Hajime et al. (JP)

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