REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK

WIPO Patent Application WO/2021/221124

A1

The objective of the present invention is to provide a reflective photomask blank and a reflective photomask that suppresses or reduces a projection effect in a reflective photomask for patterning transfer using light having a wavelength in the extreme UV range as a light source, and has resistance to hydrogen radicals. A reflective photomask blank (10) according to one embodiment of the present invention is used for producing a reflective photomask for pattern transfer having extreme UV rays as a light source, said photomask blank (10) having a substrate (1), a reflective layer (2) that includes a multilayer film formed on the substrate (1), and an absorptive layer (4) formed on the reflective layer (2), the absorptive layer (4) being formed from a material that contains a total of 50 at% or more of indium (In) and oxygen (O), the atomic number ratio (O/In) of oxygen (O) to indium (In) in the absorptive layer (4) being greater than 1.5, and the film thickness of the absorptive layer (4) being 17-45 nm, inclusive.

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NAKANO HIDEAKI (JP)
GODA AYUMI (JP)
ICHIKAWA KENJIRO (JP)

PCT/JP2021/017057

November 04, 2021

April 28, 2021

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TOPPAN INC (JP)

G03F1/24; G03F1/54

JP2019139085A	2019-08-22
JP2010103463A	2010-05-06
JP2009519593A	2009-05-14
JP2008041740A	2008-02-21
JP2006190900A	2006-07-20

HIROSE Hajime et al. (JP)

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