Title:
REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK
Document Type and Number:
WIPO Patent Application WO/2022/153657
Kind Code:
A1
Abstract:
The present invention provides a reflective photomask blank which exhibits sufficient heat resistance during light exposure, while being capable of suppressing or reducing the projection effect of a reflective photomask for patterning transfer that uses light having a wavelength in the extreme ultraviolet range as a light source. The present invention has a configuration that comprises: a substrate 1; a reflective layer 2 that is formed on the substrate 1, while comprising a multilayer film; and an absorption layer 4 that is formed on the reflective layer 2. In addition, the absorption layer 4 is configured so as to contain indium (In) and nitrogen (N) in a total amount of 50% by atom or more. The atomic ratio of nitrogen (N) to indium (In), namely N/In in the absorption layer 4 is from 0.5 to 1.5. The layer thickness of the absorption layer 4 is from 17 nm to 45 nm.
Inventors:
NAKANO HIDEAKI (JP)
GODA AYUMI (JP)
ICHIKAWA KENJIRO (JP)
YAMAGATA YUTO (JP)
GODA AYUMI (JP)
ICHIKAWA KENJIRO (JP)
YAMAGATA YUTO (JP)
Application Number:
PCT/JP2021/041787
Publication Date:
July 21, 2022
Filing Date:
November 12, 2021
Export Citation:
Assignee:
TOPPAN PHOTOMASK CO LTD (JP)
International Classes:
G03F1/24; C23C14/06
Domestic Patent References:
| WO2017038213A1 | 2017-03-09 |
Foreign References:
| JP2006190900A | 2006-07-20 |
Attorney, Agent or Firm:
HIROSE Hajime et al. (JP)
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